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We report on a novel TaNbZrHfTi-based high entropy alloy (HEA) which demonstrates distinctive dual-phase superconductivity. The HEA was synthesized under high pressures and high temperatures starting from a ball milled mixture of elemental metals in a large-volume Paris–Edinburgh cell with P ≈ 6 GPa and T = 2300 K. The synthesized HEA is a phase mixture of BCC (NbTa)0.45(ZrHfTi)0.55 with Tc1 = 6 K and FCC (NbTa)0.04(ZrHfTi)0.96 with Tc2 = 3.75 K. The measured magnetic field parameters for the HEA are lower critical field, Hc1(0) = 31 mT, and a relatively high upper critical field, Hc2(0) = 4.92 T. This dual-phase system is further characterized by the presence of a second magnetization peak, or the fishtail effect, observed in the virgin magnetization curves. This phenomenon, which does not distort the field-dependent magnetization hysteresis loops, suggests intricate pinning mechanisms that could be potentially tuned for optimized performance. The manifestation of these unique features in HEA superconductivity reinforces phase-dependent superconductivity and opens new avenues in the exploration of novel superconducting materials. 

A microwave plasma chemical vapor deposition system was used to synthesize cubic boron nitride (cBN) coatings on diamond seeded silicon substrates using direct current (DC) bias. Effects of the argon (Ar) flow rate and bias voltage on the growth of the cBN coatings were investigated. Hydrogen (H2), argon (Ar), a mixture of diborane in H2 (95% H2, 5% B2H6), and N2 were used in the feed gas. A DC bias system was used for external biasing of the sample, which facilitates the goal of achieving sp3 bonded cBN. Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Photoelectron Spectroscopy (XPS) revealed the existence of sp3-bonded BN in the produced samples. With increasing Ar flow, the cBN content in the coating increases and reaches a maximum at the maximum Ar flow of 400 SCCM used in this study. High-resolution XPS scans for B1s and N1s indicate that the deposited coating contains more than 70% cBN. This study demonstrates that energetic argon ions generated in a microwave-induced plasma significantly increase cBN content in the coating. 

By combining mask-less lithography and chemical vapor deposition (CVD) techniques, a novel two-stage diamond anvil has been fabricated. A nanocrystalline diamond (NCD) micro-anvil 30 μm in diameter was grown at the center of a [100]-oriented, diamond anvil by utilizing microwave plasma CVD method. The NCD micro-anvil has a diamond grain size of 115 nm and micro-focused Raman and X-ray Photoelectron spectroscopy analysis indicate sp3-bonded diamond content of 72%. These CVD grown NCD micro-anvils were tested in an opposed anvil configuration and the transition metals osmium and tungsten were compressed to high pressures of 264 GPa in a diamond anvil cell.